Nippon Telegraph and Telephone (NTT) announced the development of a class can be potassium nitride semiconductor thin film devices such as the use of LED sapphire substrate from the stripped down easily work arts . This technique can be used at low cost gallium nitride-based semiconductor thin thickness of the film element 2 microns. Expected to expand the application range of the gallium nitride-based semiconductor thin film material , such as visible light through the ultraviolet absorbing only efficient solar cells, and thin thickness of 200 microns such as an LED . Further , by increasing the peelable film element area , is also expected on large-area thin-film element is formed of laminated material having a new function other membrane components and other purposes.

According NTT introduced , stacked on a sapphire substrate , a gallium nitride- based semiconductor thin film processing element for the manufacture of the device , the thickness of the substrate must reach about 0.5 mm . So , how in the world are studying the film from the substrate processing element will complete strip down and paste technique on other substrates. NTT Basic Research Laboratories physical properties of graphite with the same focus on a layered crystal structure of boron nitride conduct research to develop a MeTRe Act (Mec hanical Transfer using a Release layer). MeTRe law may remain intact after stripping the crystal plane , thus eliminating the previously proposed method for transferring necessary , after the peeling step to level the surface . Moreover, the use does not require large release MeTRe method and chemical equipment , is expected to significantly reduce the manufacturing time and manufacturing costs. Developed the following two points :

High Quality Laminated Layered Boron Nitride Films

Method MeTRe laminated on a substrate having high quality layered crystal structure boron nitride thin film , and then laminating the above element of high quality film . In such a configuration, the boron nitride thin film between the substrate and the grown thin film device with perforations plays the same role as the stamp can be easily peeled off and adhered to the other substrates . According to NTT introduced the film by finding the optimal conditions for the realization of a unified direction layered crystalline boron nitride thin films of high quality .

Layered Boron Nitride Films on High-Quality GaN Thin Film Element Layered

The technology was first developed in the layered crystal structure different boron nitride thin films laminated aluminum nitride or aluminum gallium nitride buffer layer , and then layered gallium nitride thin film element . Boron nitride films on layered laminated directly with GaN wurtzite structure , then, due to the different crystal structure , so it is very difficult . AlxGa1-xN , and the aluminum nitride substrate and the aluminum substrate has a good wettability , are widely used in the crystal structures of the laminated substrate . Such substances are used by layered boron nitride buffer layer between the film and the gallium nitride , regardless of whether the different crystal structures , can be stacked to form a high -quality thin-film devices .


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