ZnO Thin Film Deposition on Sapphire Substrates by Chemical Vapor Deposition

ZnO thin films with thickness around 200 nm were deposited on a-plane sapphire substrates by Chemical Vapor Deposition (CVD) method with a mixed ZnO-powder/C-powder solid source. These films were characterized by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), and photoluminescence (PL) spectroscopy. The correlation between surface structural properties of ZnO thin films and their optical signature measured by temperature dependence of PL is investigated for various growth conditions such as flow rate O2 injection gas and growth temperature. At room temperature, the columbic interaction enhanced absorption edge of 3.305 eV of these films was determined by optical absorption measurements.

Naturally modulated structures,films of In2O3(ZnO)5, were epitaxially grown by rf magnetron sputtering on sapphire substrates. The crystallographic and morphological features of the films were characterized by using x-ray-diffraction and electron-diffraction patterns. The deposition of strongly c axis orientated films of In2Zn5O8 was achieved by epitaxy with a self-buffer layer (SBL). A film of In2Zn5O8 of approximately 10 nm in thickness was initially deposited as the SBL. This initial film was annealedin situ for 10–15 min, after which the bulk of the film of In2Zn5O8 was grown. Finally, well-crystallized In2O3(ZnO)5films were obtained by annealing the resultant film at 800 °C. The electrical properties of the synthesized film are discussed in relation to the mechanism by which the modulated In2O3(ZnO)5 structure is formed.


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