Tungsten-Doped Vanadium Oxide Analysis (2)

After studies we found the difference between vanadium dioxide (VO₂) films and tungsten-doped vanadium oxide films. Which are tungsten-doped vanadium oxide films has low phase transition temperature. But comparing XRD atlas of tungsten-doped vanadium oxide films which use microwave plasma with doping nitrogen to producing and VO2 found there has little different between both. Mainly tungsten doping is small and V^{4 +} and W^{4 +} ionic radius is very close. On the other hand VO₂ by nitrogen doping can effectively reduce the phase transition temperature, when certain tungsten content, the phase transition temperature of the sample is the incorporation of the role of nitrogen. With the reduction of plasma reaction enhanced and doping nitrogen flow change, and the great changes of phase transition temperature indicating that nitrogen ions have been incorporated into the crystal lattice of V_0.98W_0.02O₂-XNY undermine the VO₂ The stability of the semiconductor, so that the phase transition temperature changes. The experiment found that when H₂ flow of 10ml / min, N₂ was 10ml / min, the reaction of the total power of 1kPa, the reaction time was 10min, the resulting thin film phase transition temperature can be reduced to 35 ℃.

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