Tungsten-Doped Vanadium Oxide Analysis (1)

Firstly, the analysis of vanadium dioxide (VO₂) XRD and the phase transition temperature. After analysis XRD patterns found VO₂ film crystallinity is not high and smaller particle size. According to the nature of VO₂ which is when the phase changing will cause sudden change of resistivity found vanadium dioxide film will cause phase changing in temperature about 62 ℃.And the resistance change in this process very largely which showed significant calorific value phase change performance, compared to the powder, the phase transition temperature is reduced by about 6 ℃. After many researches the scholars find using microwave plasma method with doping nitrogen to produce tungsten-doped vanadium oxide films has good performance which compare to VO₂ film. On one hand, tungsten-doped vanadium oxide films have low phase transition temperature. On the other hand doping also will reduce the phase transition temperature .so doping nitrogen will good for tungsten-doped vanadium oxide films performance. But analysis the XRD found litter different with VO₂. 

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