Ti-doped Tungsten Trioxide Electrochromic Film

Ti-doped tungsten trioxide electrochromic film can be prepared by sputter deposition method. Some experts use metal tungsten-titanium alloy (mass fraction of titanium is 6%) as the target, and deposit a titanium doped tungsten trioxide (WO3: Ti) film on a FTO transparent conductive glass substrate by pulsed DC power supply using a coating machine.

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Before sputtering, the experts pump the coating chamber vacuum to below 4.5*10-4Pa. High purity argon (99.9% Ar) is used as working gas, and high purity oxygen (99.9% O2) as reaction gas. The fixed working pressure is 1.7Pa. The flow rate of Ar is 15sc/cm, and flow rate of O2 is 13sc/cm. The Ti-doped tungsten trioxide electrochromic film with different substrate temperatures are deposited by changing the substrate temperature to room temperature, 200°C, 300°C and 350°C, respectively. The effects of different substrate temperatures on the structure and properties of Ti doping tungsten trioxide electrochromic film is investigated.

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