Due to its unique band gap properties, inherent vacancy defects, and low electrical conductivity, WS₂ films can be used for catalysis. Catalysis including photocatalysis and electrocatalysis is essential in our daily life, and they have been widely used for environmental protection and clean energy generation.

Two common methods for preparing tungsten disulfide (WS₂) films by chemical methods are chemical vapor deposition (CVD) and hydrothermal growth of single-crystal tungsten disulfide from aqueous solutions under high temperature and pressure conditions. CVD is the most common method used to prepare tungsten disulfide. The CVD method involves a reaction process in which a gaseous precursor reacts chemically on a solid surface to produce a solid deposit.

Bulk tungsten disulfide (WS₂) can be stripped by physical and chemical methods, which are classified as mechanical and stripping method, and lithium-ion intercalation method. In recent years, in order to obtain large-area, high-quality monolayer tungsten disulfide films, researchers have tried to grow monolayer tungsten disulfide films on ingot substrates and then exfoliate them by atomic or molecular intercalation methods.

Owing to unique physical and chemical properties, transition metal dichalcogenides (TMDs) attract research interest. Among the family of TMDs, tungsten disulfide (WS₂) has a unique band structure due to its semiconductor properties; i.e., its broadband spectral response characteristics, ultra-fast bleaching recovery time, and excellent saturable light absorption.