Fabrication of GaN Nanowires on Pd-Coated Sapphire Substrates by Magnetron Sputtering Technique

Large-scale GaN nanowires were successfully synthesized through ammoniating Ga2O3/Pd films sputtered on the sapphire substrates. X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, photoluminescence and Raman spectrum were used to characterize the specimens. The results demonstrate that nanowires are single crystal with hexagonal wurtzite structure and have good optical properties. Raman scattering appears broadened and asymmetric compared with those of bulk GaN due to its polycrystalline nature. In addition, the growth mechanism of GaN nanowires is briefly discussed.

Controlled and reproducible growth of GaN nanowires is demonstrated by pulsed low-pressure metalorganic chemical vapor deposition. Using self-assembled Ni nanodots as nucleation sites on sapphire substrates we obtain nanowires of wurtzite-phase GaN with hexagonal cross sections, diameters of about 100 nm, and well-controlled length. The nanowires are highly oriented and perpendicular to the growth surface. The wires have excellent structural and optical properties, as determined by x-ray diffraction, cathodoluminescence, and Raman scattering. The x-ray measurements show that the nanowires are under a complex strain state consistent with a superposition of hydrostatic and biaxial components.


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