High-Speed Epitaxial Growth of AlN Above View The MathML Source by Hydride Vapor Phase Epitaxy

Aluminum nitride (AlN) epitaxial layer on sapphire substrate was grown at high temperatures above View the MathML source by hydride vapor phase epitaxy (HVPE). A high-temperature growth system was built by combining a conventional hot-wall type furnace and a heating susceptor with integrated heating element. This system realized growth of AlN by HVPE above View the MathML source even in the quartz reactor. Growth rates of AlN stay constant in the temperature range of View the MathML source. This result was consistent with the results expected from thermodynamic analysis, and represents that growth of AlN by HVPE is under mass transportation limited process even at high temperatures. Epitaxial growth of AlN with growth rate of View the MathML source was achieved at View the MathML source.

The annealing behavior under cw Ar laser irradiation (Li) has been studied for 0.2–0.5‐μm‐thick silicon‐on‐sapphire (SOS) epitaxial films. Analysis by MeV He+ channeling shows that after LI in the solid phase, Si‐implanted films, which had a buried amorphous layer beneth ≈30 Å of surface crystal, become crystalline, but are more defective than the original chemically vapor‐deposited (CVD) films. By contrast, furnace annealing of similar layers significantly reduces the defect concentrations below the surface crystal, compared to the defect level in CVD SOS. LI of CVD or Si‐implanted SOS in the liquid phase reduces the defect concentration throughout the film thickness, but the regrown films are laterally nonuniform and have a high Al content.


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