University of Cambridge CCS system achieve 6-inch GaN on silicon wafer growth epitaxial

Aixtron SE of Herzogenrath, Germany says that the University of Cambridge has commissioned another multi-wafer Aixtron Close Coupled Showerhead (CCS) MOCVD reactor at its new facility at the Department of Material Science and Metallurgy.

According to Aixtron, the University of Cambridge CCS 6x2-inch system will be configured to handle single 6-inch (150mm) wafers (1x6-inch). Continue to advance University of Cambridge in the development and practice of the LED and electronic equipment。

Tony Pearce, manager of Aixtron, said: “Aixtron is proud to continue its long-standing collaboration with the University of Cambridge and to supply another state-of-the-art CCS research system to complement the university’s existing reactor. Under Prof. Humphreys’ lead, the Cambridge group has developed world leading GaN-on-Si processes and we look forward to further supporting this work with this new system.”

University of Cambridge GaN center not only has a nitride semiconductor production capacity, but also one of the few Research Centers with electron microscopy, X-ray diffraction, atomic force microscopy, photoluminescence (PL) and Hall-effect devices, and other advanced characterization facilities in the world.


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