Polycrystalline Tungsten Doped Tin Oxide Transparent Conductive Oxide Thin Film

The invention belongs to the field of transparent conductive thin film technology, in particular to introduce a tungsten-doped tin dioxide (SnO2: W) polycrystalline tungsten-doped tin oxide transparent conductive oxide films. Characterized in that:

In the present invention, the metal tungsten powder and tin dioxide mixed by grinding, tabletting, the obtained sintered block material as a target; on a quartz glass substrate at room temperature using pulsed plasma deposition (PPD) technology, the appropriate target composition, deposition pressure, pulse current, pulse voltage, and the preparation obtained after the heat treatment technology SnO2 having a polycrystalline structure: W film.

Preparation of films having a low resistivity, excellent optical and electrical characteristics of high carrier mobility, the visible range (400-700nm) high transmittance and near infrared range (700-2500nm) high transmittance and the like. Film obtained in the method of the invention of flat panel display, photoelectric sensors, infrared sensors, and especially in the past in areas such as solar cells have good prospects.

 

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