Tungsten Crucible for Sapphire Use (2)

Tungsten crucibles can applied in sapphire growing, serving as one of its core components, under normal circumstances, tungsten crucible size for this purpose will be relatively large, height is about: 300-500mm, outer diameter is about: 300-500mm. Sapphire growth furnace is for growing the LED chip.

Because of good high temperature resistance performance of tungsten crucible, so when it is in high temperature conditions, tungsten crucible is still able to maintain its stable performance, physical and chemical reactions do not occur with the single crystal, and the single crystal purity is guaranteed. Therefore, it makes tungsten crucible more popular than other materials for sapphire single crystal growth furnace.

Sapphire growth furnace aims to foster sapphire single crystal by Kyropoulos method. This method is: heating the raw material (alumina) of tungsten crucible to its melting point of 2050 degrees or more, and then gradually reduce the melting temperature, so it can crystallize into specific granules. The growth furnace is constructed in a closed mold with special insulation shell, cover and a heater.


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