Semiconductor Gas Sensing Film Material: WO3 Film

As a semiconductor gas sensing film material, WO3 film has good sensitivity to NOx, H2S, H2, CH4, C2H5OH, CO, NH3 and other gases, so it has broad application prospects. Therefore, the preparation of WO3 film has been paid much attention. Here is a preparation method of WO3 film.

More details, please visit:
http://tungsten-oxide.com/index.html

Preparation of WO3 Film

The Al2O3 substrate is pulled out of the WO3 sol at a constant speed of 4.6-4.8 cm/min by using the pull coating method to form a layer of sol film on the surface of the substrate. After drying the prepared sol film under an infrared lamp for 10 min, the temperature was increased to 600 °C at a rate of 10-15 °C/min for pretreatment, and the temperature was kept for 20 min to firmly adhere the film to the surface of the substrate. After washing the pretreated film with deionized water and drying it, the process of pulling coating and pretreatment was repeated. Finally, the film was heated at 650 °C and kept for 30 min to prepare a WO3 film with a certain thickness. The obtained WO3 film has commercial application prospects as a semiconductor gas sensing film material.

• < Prev
• Next >