Large Area Preparation of Two-dimensional Tungsten Disulfide

Because of its excellent electrical, optical and thermal properties, two-dimensional materials have aroused the enthusiasm of non-mathematicians and attracted extensive attention in the field of materials science. Two-dimensional tungsten disulfide is a new type of graphene-like two-dimensional material, which has great potential for applications in electrical devices, energy, biology and composite materials.

Therefore, some scholars have proposed a controllable method to prepare large area of two-dimensional tungsten disulfide. The preparation process is as follows:

Using atmospheric pressure chemical vapor deposition method, 0.2g WO₃ and 1g S were weighed and placed in two quartz boats; the quartz boat with S was placed 25 cm away from the intake of tube furnace; the quartz boat with WO₃ was placed in the quartz boat, and the cleaned silicon dioxide/silicon substrate (1cm x 1cm) was dried by nitrogen gas gun, then cleaned by oxygen plasma cleaner for 3 minutes. The silicon wafer substrate is slanted on the quartz boat and placed in the center of the heating zone. The tube furnace is pre-filled with nitrogen for 60 minutes and the nitrogen flow rate is 200 sccm. The air in the tube is discharged completely. The nitrogen flow rate was adjusted to 100 sccm, and the tube furnace was heated to 950 C at the heating rate of 30 ℃/min for 15 min. When the tube furnace naturally cooling to room temperature, open the furnace cover to obtain the required two-dimensional tungsten disulfide.

The above process is an effective two-dimensional tungsten disulfide preparation method. It is not only simple in process, but also of high quality. The area of the prepared tungsten disulfide is large, the edge length of triangular grains can reach 120 microns, and the transverse size of continuous films can reach millimeter scale. It has the prospect of industrialization.

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