Tungsten Oxide Heterojunction CVD Method

The most common method for preparing tungsten oxide heterojunctions is chemical vapor deposition (CVD). The basic principle of the CVD method is to grow a two-dimensional crystal on a tungsten oxide substrate, and then grow different two-dimensional materials on the basis to form a two-dimensional heterogeneous structure. The main operation procedure is to pass the reactant into the reaction vessel in the form of gas and then to deposit it on the substrate as a solid after the chemical reaction takes place.

CVD is the most widely used technology in the semiconductor industry for depositing a wide range of materials, including a wide range of insulating materials, most metallic and metallic alloys. The principle of two or more of the gaseous raw materials into a reaction chamber. The two chemically react with each other to form a new material that is deposited on the surface of the wafer. The CVD method can not only control the stacking orientation in the tungsten oxide heterojunction but also modify the atomic composition of the monolayer.

Tungsten oxide heterojunction is the interface area formed by the contact of two different semiconductors. The typical conditions for the formation of a tungsten oxide heterojunction are that the two semiconductors have similar crystal structures, similar atomic distances, and thermal expansion coefficients. The use of interface alloy, epitaxial growth, vacuum deposition and other technologies, can manufacture tungsten oxide heterojunction. Tungsten oxide heterojunction often with ordinary tungsten oxide cannot achieve the excellent photoelectric properties, making it suitable to produce ultra-high-speed switching devices, solar cells and semiconductor lasers.

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