Tungsten Oxide Quantum Dot Emitter

A quantum dot light-emitting device is a substance composed of a hole transport layer, a light-emitting layer, and an electron transport layer. Compared with the traditional light-emitting devices, quantum dot light-emitting devices with self-luminous, high brightness, wide viewing angle, fast response, low energy consumption and many other advantages. Quantum LED is expected to become the next generation of flat panel displays, has a very broad application prospects.

Tungsten oxide can act as a carrier transport layer for a quantum dot emitter. Using a tungsten oxide semiconductor as a carrier transport layer can improve the air stability of the quantum dot emitter. At present, due to the low external quantum efficiency of ordinary quantum dot devices, the use requirement can not be achieved. The reason for this is that the quantum dots are damaged in the metal oxide deposition process, resulting in the imbalance of the transport of hole carrier and electron carrier. Therefore, increasing the hole transport rate of the quantum dot emitter can improve the luminous efficiency of the quantum dot emitter.

Tungsten oxide is a common transition metal oxide semiconductor, has a very good photoluminescence properties and photoconductive properties, is widely used in solar devices, electrochromic materials. It has been studied that tungsten oxide can be used as a hole injection layer in a quantum dot light emitter to efficiently inject electron holes from the anode into the organic hole transport layer of the device. Tungsten oxide is a very promising transition metal oxide hole transport material because of its good hole transport ability.

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