APT Preparing Gas Sensitive Material--Tungstate Bismuth

Currently the fuel cell type (electrochemical type) and a semiconductor type are widely used in gas detection equipment to detect the ethanol content. The semiconductor gas sensor is using the changing of physical properties when the semiconductor surface adsorbing the gas to detect the gas. It becomes a hot research of gas sensors field, because of its easy-to-implement integration, miniaturization, high sensitivity, and low power consumption and safe and reliable. At currently the normally materials used in semiconductor gas sensor are SnO₂, WO₃, ZnO, NiO, MgO, BaTiO₃ ect.. The most important factor affecting the performance of gas sensing is the adsorption property, and the structure, morphology, size and specific surface area are directly related to its adsorption property. So, it’s very meaningful to development a new semiconductor material with special structure and morphology, surface area, strong adsorption performance and high response and high selectivity.



APT, bismuth nitrate to prepare sensitive material--tungstate bismuth with special structure by hydrothermal synthesis method, the steps are as following:
1. Adding bismuth nitrate into nitric acid solution, and stirring at 30-50°C till the solid bismuth nitrate dissolved completely;
2. Adding APT into the solution, and then adjusting the pH value to 0.5-2 by NaOH solution;
3. Continually stirring for 2 hours, and then transferring the solution to a pressure melting bombs for reacting at 140-190°C for 10min-12h;
4. Taking out the products after the reaction completed, and cooled down to room temperature, then separated by centrifugation, washed, dried, and then vacuum dried for 1~3 hours to obtain the sensitive material--tungstate bismuth with special structure.

• < Prev
• Next >