Tungsten Trioxide Photoelectric Conversion Factors

The principle of the photoelectric conversion process is that the photon energy of the electrons and the subsequent transfer to form the current movement. There are two ways to resolve this process, the most common is to use solid means of silicon as the main material, and the other is to use photosensitive dye molecules to capture the energy of the photon. It will allow the dye molecules to absorb photon energy of the semiconductor in the negatively charging electrons and positively charging holes.

Tungsten trioxide (semiconductor material) is a photoelectric conversion process for the light incident on the semiconductor material, valence electrons will absorb the energy of the photon belt, and only when the photon energy is absorbed by electrons in the valence band, and it is large enough to meet the electronic transition to the conduction band. Photo-generated electron - hole after separation, is a hole in the surface of the oxide material of the photoelectric conversion sites. However, electronic transitions migrates to restore point will re-migrate to the outer circuit after the formation of the current conduction band or restoring point to achieve the photolysis of water to produce hydrogen.

Photoelectric conversion process of tungsten trioxide material is divided into three parts: the electronic absorption of light energy, light energy conversion an electron, transition occurs and the whole separation and electron transport to the outer circuit. After analyzing the main factors that affect the performance of the tungsten trioxide photoelectric conversion are: process photoanode prepared; crystalline nanostructure dimensions and materials; morphology nanostructure films; photoelectron and recombination and separation; and three photoelectron transmission tungsten oxide and other surface defects.

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