Coated Cemented Carbide Process III
- Details
- Category: Tungsten Information
- Published on Monday, 04 January 2016 17:20
Based on traditional chemical vapor deposition (CVD) and physical vapor deposition (PVD), some new coating technologies are emerging.
5. Plasma Chemical Vapor Deposition (PCVD)
Plasma Chemical Vapor Deposition (PCVD) uses the kinetic energy of charged particles of plasma to inspire the vapor chemical reaction. The basic principle is that deposited a film with high hardness and high wear resistance on the surface of metal matrix, such as titanium nitride (TiN), TiAlN, TiCN, TiSiN hard film and so on. Different from traditional chemical vapor deposition (CVD), PCVD has lower deposited temperature (about 500-600℃), which reduces the deposition directionality and makes the coating uniform. At present, the coating temperature of latest PACVD decreases to 180-200℃, the welding properties is much better and the welding place is no affected, which is suitable for welding-used tungsten carbide cutting tools and the surface hardening process of mold. The experimental data shows that compared with common high-speed steel drills, tungsten carbide drill by PCVD has higher efficiency, better comprehensive properties (wear resistance and corrosion resistance) and the service life extended about 10 times in the process of steel machining.
6. Vacuum Cathodic Arc Deposition (VCAD)
Vacuum Cathodic Arc Deposition (VCAD) is a kind of process that uses cathodic arc to evaporate and disassociate the target and deposited under negative bias voltages, which has many advantages, such as lower deposition temperature, higher deposition rate, larger covered acreage deposition, high ion energy, high ionization rate, good binding force between the film and the matrix, simple operation and simple equipments, etc. It can be widely used in TiN, TiC and some super-hard film deposited.
Some researcher study that based on the original process of vacuum cathodic arc deposition TiN film, uses titanium aluminum to take place of titanium target for deposited the (Ti, Al)N film with excellent properties, which is beneficial for pushing forward (Ti, Al)N film industrialized producing. Except applied in some metal film with high quality, VCAD is also suitable for Ta-C, optical film, transparent conductive oxide film, nitride multi-layers, nano composite film, MAX phase and some various film deposited.
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