Pure Tungsten Electrodes: Key Material in the Welding Industry

pure tungsten electrode image

Pure tungsten electrodes, as one of the earliest electrodes used in argon arc welding, have consistently played a significant role in the welding industry. This type of electrode, characterized by its high melting point, high density, corrosion resistance, and excellent electrical and thermal conductivity, has become an indispensable key material under specific welding conditions.

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What Are the Types of Tungsten Electrodes?

thoriated tungsten electrode image

The types of tungsten electrodes are mainly classified according to the different rare earth oxides or alloy elements doped in them. Here are the common types of tungsten electrodes and their characteristics:

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What Are the Factors That Affect Tungsten Disulfide Nanosheet Performance?

China tungsten online tungsten disulfide

Tungsten disulfide nanosheet (WS₂ nanosheet) is a typical two-dimensional nanomaterial with a large specific surface area, a low friction coefficient, good electrochemical performance, and optical properties. It has great potential in the fields of nanoelectronics, optoelectronic devices, flexible electronics, lubricating materials, and chemical catalysis. So, what are the factors that affect tungsten disulfide nanosheet performance?

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What Are the Preparation Methods of Tungsten Disulfide Nanosheet?

China tungsten online tungsten disulfide powder picture

Tungsten disulfide nanosheet (WS₂ nanosheet) is a typical transition metal tungsten compound. There are many different preparation methods, each of which has its own unique principles, operation procedures, advantages and disadvantages.

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What Are the Electrical Properties of Tungsten Disulfide Nanosheet?

China tungsten online tungsten disulfide picture

Tungsten disulfide nanosheet (WS₂ nanosheet), as a typical transition metal sulfide material, is a semiconductor material with a hexagonal crystal structure (space group P6₃/mmc). Each layer is a sandwich structure formed by a W atomic layer sandwiched between two S atomic layers. Research indicates that a single layer of WS₂ has a direct band gap of about 1.8eV, enabling it to exhibit a quantum efficiency superior to that of indirect-band-gap semiconductors in the optoelectronic device field. The room-temperature carrier mobility of a single-layer WS₂ nanosheet can reach 100-300cm²/V・s, and the electron concentration is approximately 1×10¹²cm⁻², significantly outperforming traditional silicon-based materials. Notably, the electron mobility of WS₂ nanosheet shows obvious thickness dependence. For instance, the mobility of a 10-layer structure can drop to below 50cm²/V・s, closely related to the enhancement of interlayer phonon scattering.

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