Using Microwave Method Producing Tungsten Vanadium Dioxide (3)

According to the nature of vanadium dioxide which will cause phase change in about 68 ℃. Relevant researchers found that doping can not only reduce the phase transition temperature of vanadium dioxide, but also VO2 film can effectively reduce the VO2powder phase transition temperature. Therefore, using microwave plasma to produce tungsten vanadium dioxide films with nitrogen daped the phase transition temperature can be reduced to 35 ℃. The producing process of tungsten vanadium dioxide as follows: Using microwave plasma method to restore prepared V1.96W0.04O5 film to V0.98W0.02O2 with well controlling response parameter then doping nitrogen in V0.98W0.02O2. This method can make V1.96W0.04O5 which is stoichiometric ratio restore to different nitrogen content‘s tungsten vanadium dioxide (V0.98W0.02O2-XNY). The reaction parameter setting range is as follows: total pressure 1kPa, reactive power 100-200W, N2 flow rate of 20ml / min, H2 flow rate of 20ml/min, the reaction time is 10-30min. By setting different parameters and process conditions can produce V0.98W0.02O2 film with different amounts of nitrogen-doped. The experiment found that with the nitrogen ions incorporation can effectively reduce the phase transition temperature of tungsten vanadium dioxide film, the minimum can be reduced to 35 ℃.

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