Using Microwave Method Producing Tungsten Vanadium Dioxide (2)

Vanadium dioxide (VO2) in the temperature range of 68 ℃ is easy cause phase change, which can limit VO2 application scope. Doping can effectively change the VO2 phase transition temperature, making it can widely use in other fields, so now there are many methods for doped VO2. And experiment found VO2 film can be further reduced VO2 powder’s phase transition temperature. Therefore, using microwave plasma method to produce tungsten vanadium dioxide thin films with doping nitrogen has low transition temperature. Using microwave plasma method to produce tungsten vanadium dioxide film is selecting V2O5 and W2O3 as precursors coated in the glass, then by microwave plasma enhanced synthesis method producing. The V1.96W0.04O5 colloids and producing process as follows:
1. A certain amount of V2O5 powder and W2O3 into the pot, stir, placed in a muffle furnace heated to 900 ℃ melted in an air medium.
2. After 15 minutes heat preservation, quickly putting solution in the certain amount deionized water cooling immediately, with vigorous stirring. Until create V1.96W0.04O5sol with stoichiometric ratio.
3. Using spin coating method, with 75% alcohol and deionized water repeatedly cleaned glass then coating prepared V1.96W0.04O5 sol in the glass.

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