Growth of Semipolar GaN Layer by Controlling Anisotropic Growth Rates in r-Plane Patterned Sapphire Substrate

Semipolar GaN was achieved by controlling anisotropic growth rates in a maskless r-plane patterned sapphire substrate. Upon optimizing the growth conditions, the growth rate of the GaN layer on etched c-plane-like sapphire was much higher than that on other planes such as the original r-plane sapphire. Singularly-oriented GaN was confirmed when GaN was grown on only the c-plane-like sapphire sidewall. The control of the anisotropic growth rate is useful for growing nonpolar and semipolar layers using maskless patterned substrates.

In this letter we describe the structuralcharacteristics of nonpolar a-plane GaNthin filmsgrown on r-plane sapphire substrates via metalorganic chemical vapor deposition. Planar growth surfaces have been achieved and the potential for device-quality layers realized by depositing a low temperature nucleation layer prior to high temperature epitaxialgrowth. The in-plane orientation of the GaN with respect to the -plane sapphire substrate was confirmed to be and This relationship is explicitly defined since the polarity of the -GaN films was determined using convergent beam electron diffraction. Threading dislocations and stacking faults, observed in plan-view and cross-sectional transmission electron microscope images, dominated the -GaN microstructure with densities of and respectively. Submicron pits and crystallographic terraces were observed on the optically specular -GaN surface with atomic force microscopy.


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