Doping Tungsten Influence Vanadium Dioxide’s Phase Temperature

Vanadium dioxide film is a new type of heat-sensitive functional materials. It is with increasing temperature at about 68 ℃ will change from semiconductor monoclinic rutile structure to metallic state tetragonal rutile structure. Besides the resistivity and infrared light transmittance and other physical properties are also mutated, based on this characteristic, it is widely used in optical data storage, optical switches and smart windows and other fields. However, due to the phase transition temperature of vanadium dioxide is too high to be widely used. After the studies found that the incorporation a small amount of tungsten ions in vanadium dioxide film can effectively reduce the phase transition point of the film, which is conducive to tungsten vanadium dioxide film be applied in more areas.
Vanadium dioxide doping tungsten cause phase transition temperature lower there are two interpretations, the first one is because when the metal - semiconductor phase transition the vanadium atoms of lattice center off center octahedral voids, then tungsten which has larger atomic radius replace vanadium atoms, however, vanadium octahedral body no extra space for tungsten atoms from the center so as to stabilize the vanadium dioxide metal phase. The second explanation is tungsten has more than two d electrons into V3d vanadium, making the band gap of the semiconductor phase decreases.

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