Due to the promising applications of tungsten disulfide nanomaterials in the field of energy conversion and storage, efforts have been made to study and improve its electrical characteristic and HER mechanism of WS₂, such as carrier concentration (p), mobility (μ), and resistivity (ρ). According to theoretical predictions, WS₂ has the highest electron mobility in semiconductor TMDCs due to the reduced effective mass.

Due to the rapid growth of the global population and rapid socio-economic development, energy and environmental issues have received widespread attention. As a transition metal disulfide, tungsten disulfide nanomaterials have made important research advances in the field of energy conversion and storage. Given the versatility and rich microstructure of these materials, the plasticity and controlled synthesis of tungsten disulfide (WS₂) nanomaterials are of interest to researchers.

Compared with semiconducting materials, tungsten disulfide nanomaterials exhibit higher light absorption, and photocatalytic properties are another important property. For semiconductor materials, light absorption properties are very important, especially for photocatalysis. When WS₂ absorbs photons, transitions between in-band, out-of-band, and impurity defects occur, which can form specific absorption spectra. The characteristic absorption peak of bulk WS₂ is near the wavelength of 910 nm and is located in the near-infrared (NIR) region. By forming nanostructures, a blue shift of the WS₂ characteristic absorption peak can be observed.

An article published in the Journal of Solid State Chemistry by Schutte et al. illustrates that crystal structures of tungsten disulfide (WS₂) and tungsten diselenide (WSe₂) host the same type of layered structure as molybdenum disulfide (MoS₂). In addition to the common hexagonal 2H form of WS₂, a rhombohedral form, 3R-WS₂, has also been reported, which is isotypic to the rhombohedral form of MoS₂.