Tungsten disulfide nanosheet (WS₂ nanosheet) is a typical transition metal tungsten compound. There are many different preparation methods, each of which has its own unique principles, operation procedures, advantages and disadvantages.

Tungsten disulfide nanosheet (WS₂ nanosheet), as a typical transition metal sulfide material, is a semiconductor material with a hexagonal crystal structure (space group P6₃/mmc). Each layer is a sandwich structure formed by a W atomic layer sandwiched between two S atomic layers. Research indicates that a single layer of WS₂ has a direct band gap of about 1.8eV, enabling it to exhibit a quantum efficiency superior to that of indirect-band-gap semiconductors in the optoelectronic device field. The room-temperature carrier mobility of a single-layer WS₂ nanosheet can reach 100-300cm²/V・s, and the electron concentration is approximately 1×10¹²cm⁻², significantly outperforming traditional silicon-based materials. Notably, the electron mobility of WS₂ nanosheet shows obvious thickness dependence. For instance, the mobility of a 10-layer structure can drop to below 50cm²/V・s, closely related to the enhancement of interlayer phonon scattering.

Tungsten disulfide nanosheet (WS₂ nanosheet) is a typical two-dimensional nanomaterial with a large specific surface area, a low friction coefficient, good electrochemical performance, and optical properties. It has great potential in the fields of nanoelectronics, optoelectronic devices, flexible electronics, lubricating materials, and chemical catalysis. So, what are the factors that affect tungsten disulfide nanosheet performance?

Tungsten wire, as a metallic material possessing extremely high melting point, hardness, and electrical and thermal conductivity, not only holds a significant position in industries such as manufacturing, electronics, and aerospace but has also demonstrated unique value in medical applications in recent years.