It is well known that during the sputtering, the interaction between Ar plasma and WO3 bulk can highly distort and tilt the form works of the WO6 octahedra and thus results in an amorphous film. At the same time, a large number of oxygen vacancies and defects, which can reduce the tungsten ions from W6+ to W5+ or W4+, would be produced in the deposited films. This is responsible for the violet-red color and the amorphous XRD data of the films annealed below 300℃. The obvious crystallinity of the deposited films at 400℃ for 60 min implies that the defects and disordered structures in the films have been effectively activated by this temperature. Consequently, increasing the annealing time at 400℃ is obviously favorable to the crystallinity and the growth of the films.

 

 

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