Several preparation techniques have been used to deposit tungsten oxide thin films, including sol-gel, hydrothermal technologies, chemical vapor deposition, thermal evaporation, pulsed laser deposition, and magnetron sputtering. In fact, reactive magnetron sputtering is one of the most versatile techniques to deposit oxide films, allowing the control of many properties of the films by changing the partial pressure of the reactive gas, the components with the different targets and even sputtering power. Many reports have been published explaining the mechanisms involved in thin film growth using magnetron sputtering, but very often these refer to tungsten oxide thin films obtained from a metallic tungsten target. In contrast, the reports on tungsten oxide thin films obtained from a WO3 target are seldom reported. In 2009, Acosta et al. reported the studies on the optical properties of tungsten oxide thin films by non-reactive sputtering of WO3 target and found that the argon pressure had a strong influence on the optical properties of the film. It has been predicted that a large amount of oxygen vacancies, defects and disordered structures in the deposited films, which are very critical in determining the crystalline, optical, photochemical and electric properties of tungsten oxide thin film, would be produced when the sputtering plasma interacts with WO3 bulk.

 

 

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