Growth And Process Modeling Studies of Nickel-Catalyzed Metalorganic Chemical Vapor Deposition of GaN Nanowires

A combination of experimental and computational fluid dynamics-based reactor modeling studies were utilized to study the effects of process conditions on GaN nanowire growth by metalorganic chemical vapor deposition (MOCVD) in an isothermal tube reactor. The GaN nanowires were synthesized on sapphire substrates using nickel thin films as a catalyst. GaN nanowire growth was observed over a furnace temperature range of 800–900 °C at V/III ratios ranging from 33 to 67 and was found to be strongly dependent on the position of the substrate relative to the group III inlet tube. The modeling studies revealed that nanowire growth consistently occurred in a region in the reactor where the GaN thin-film deposition rate was reduced and the gas phase consisted primarily of intermediate species produced by the reaction and decomposition of trimethylgallium–ammonia adduct compounds. The GaN nanowires exhibited a predominant growth direction. Photoluminescence measurements revealed an increase in the GaN near-band edge emission intensity and a reduction in the deep-level yellow luminescence with increasing growth temperature and V/III ratio.

Epitaxial lead lanthanum zirconate titanate [PLZT(9/50/50)] thin films were fabricated on various single crystal substrates using the spin coating of metallo-organic solutions. The films were heat-treated at 700 °C for 1 h using the direct insertion method. The films were epitaxially grown with being parallel to the SrTiO3, the MgO, and the sapphire substrates, respectively. The epitaxy of the films was investigated using x-ray diffraction, pole figures, rocking curves, and scanning electron microscopy.


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