Multiple Growth of Profiled Sapphire Crystals
- Details
- Category: Tungsten & Sapphire Growth Furnace News
- Published on Tuesday, 17 December 2013 09:41
Pulling of shaped sapphire crystals using resistance heating implemented by means of heating elements in a “circular” or a “linear” growth arrangement is described. The growth equipment can be easily disassembled beacause the individual molybdenum dies are connected to a die-holding block with a diffusion Mo-Mo bonding having a reduced strength. Advantages of the individual processes are described and the influence of the die-top temperature upon the quality of pulled crystal shapes is mentioned.
Edge Defined film Fed Growth (EFG) SaphikonTM sapphire crystals have been grown and successfully processed into windows measuring 225 x 325 mm with a thickness of 5.6 mm. More than 40 windows have been completed and assembled into customer hardware and delivered. The polished and coated windows have exhibited average transmission >93% from 1 to 5 mm and wavefront measurements of <0.1 waves rms (@ 0.633 μm) over a 125 mm aperture. Optical measurement data are presented and aspects of the crystal growth and polishing processes are discussed.
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