Thermal Evaporation Method Producing Tungsten Oxide Nanowire

Thermal evaporation method is a vapor deposition method, and it has a high efficiency character. Production tungsten oxide nanowires process is firstly setting base pressure to 10-1Pa, work forced to 10Pa, evaporation time is 15min.

Then put tungsten powder on the stove and silicon wafer near tungsten powder by horizontally. Then putting inert gas clean up argon gas and the inert gas flow is 70sccm. Finally heating tungsten powder and it will oxidize to tungsten oxide then grow deposited on a silicon wafer developed to nanowires. At the same time the evaporation temperature are set to 975 ℃, 1000 ℃, 1025 ℃, 1050 ℃, wafer silicon temperature was maintained at 550.

After study experts found that the growth of tungsten oxide nanowires exist certain rules, with the evaporation temperature, the vapor concentration in the silicon surface can also become large, over saturation increases, increasing the number of nucleation, tungsten oxide nanowires diameter increases, the height of increase first then to decrease, reduce the crystal orientation when the temperature is too high. The wafer silicon temperature increase, the active of tungsten oxide vapor molecules on silicon becomes large and the crystallization speed of tungsten oxide nanowires accelerate, height has increased. It is easy to found producing different morphologies tungsten oxide nanowires can through control evaporation source and the wafer temperature.

 

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