The main function of packaging materials includes mechanical support, signal transduction, heat radiating, sealing and protecting products, so they requested that the material has a certain mechanical strength, good electrical and thermal capacity, chemical stability, and product line expansion coefficient matched material, easily for producing Conventional substrates has been difficult to meet the rising temperature of the circuit and to ensure steady long run, this will affect the reliability of electronic components to some certain extent. Therefore, tungsten copper material becomes more and more significant in microelectronics packaging. Electronic components and packaging material due to small size, complex structure and other reasons, it is difficult for mass production by conventional pressing sintering process method, which makes tungsten copper powder injection molding technology has been further developed.
Related researchers uses 10%, 15%, 20% content of copper for powder injection molding, which after infiltration obtained, fine-grained tungsten-copper composite materials, have reached a density more than 99%, transverse rupture strength reaches 1500MPa. Some scholars have also done the injection molding parameters tungsten copper W-30Cu nano-composites T-die, and after forming the binder removal process to obtain a good surface quality, regular shape of the compact, the adhesive extrusion rate reached more than 99%, can be obtained through direct sintering manner relative density higher than 96% of tungsten-copper composite parts. However, the process will caused by tungsten (W) powder loading of different or the intake air in the mixing process and lead to material gathered in the stress state, a certain amount of defects such as large irregularly shaped cracks or holes generated in the process of degreasing, it is easy leading to infiltration of copper pool and closed pores formed.
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