Increasing Tungsten Trioxide Surface Energy Improving Photoelectric Conversion

Improving photoelectric properties by taking precious metals surface as loading energy of tungsten trioxide (WO₃) . The more common ways for noble metal are sputtering, deposition light, liquid adsorption, hydrogen reduction and the boron compound pulse electrodeposition method. And many scholars have reported the use of more precious metals deposited on WO₃ surface together or sequentially deposited using hierarchical manner. Scholars found that when the load is metal Ag, optical and electrical properties of WO₃ most is obvious, when the light irradiating on the surface of WO₃, electron energy will start to give the valence band to the conduction band, and then migrate to the Ag nanoparticles on the light-generated electron-rich, lower electron - hole recombination probability.

Dopant ions can increase the photoelectric properties of WO₃. Ion doping is mainly accessed through the cation and anion inside the lattice to WO₃, WO₃ semiconductor substitution of W + W O₂- ions or oxygen ions to affect the electron excitation and electron - hole separation. The study shows doping Cr, Mo equivalent of these metal replacement lattice W atom, not only is small on the geometry of the lattice, but also the bottom of the conduction band reduce the band gap; when the doping Ti, Zr, Hf, W is less than the valence state of the metal . Oxygen vacancies, oxygen vacancies are formed. The W atoms will cause the bottom of the conduction band of the shift because the band gap decreased from doping on the whole.