The tungsten oxide film may be deposited on the substrate by any suitable method including such conventional deposition techniques as, e.g., sputtering, chemical vapor deposition (CVD) and the spray method. As would be apparent to those skilled in the art in view of the present disclosure, the tungsten source employed in such methods will vary with the technique used. The process of depositing a film of tungsten oxide according to sputtering generally involves the application of a radio frequency voltage to a solid tungsten metal target exposed to an oxygen-containing atmosphere at reduced pressure. Chapman is hereby expressly incorporated by reference for its teachings of sputtering techniques. Another useful film deposition technique which may be employed to deposit a tungsten oxide film according to the present invention, is the well-known CVD process. It generally involves the flowing of gaseous reactants, one of which is a tungsten compound such as tungsten carbonyl, over a heated substrate. Thin Film Processes edited by J. L. Vossen and Werner Kern is herein expressly incorporated by reference for its teaching of such a process. Still other useful processes for depositing the tungstenoxide film on the surface of the substrate will be apparent to those skilled in the art in view of the present disclosure. The temperature of the substrate during the deposition process may vary and is not critical to the invention. For example, the tungstenoxide film may be deposited at room temperature or at an elevated temperature, the latter being the case when such films are deposited on a hot glass ribbon being produced by the well-known float glass process. The latter may involve temperatures in the range of 80° C. to about 700° C.
Generally, the tungsten oxide film is deposited on the substrate in a thickness of preferably between about 200 and 6000. The desired thickness of the film is determined by various factors, including reactant concentrations temperature and substrate velocity.
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