Research Status of Photoelectric and Electrocatalytic Properties of WS2 Film

Among MoS2, WS2, MoSe2, and WSe2, the intrinsic state of WS2 is a bipolar semiconductor with both n-type and p-type electron transport characteristics. Therefore, graphene-like WS2 films have become the current research in the field of two-dimensional atomic layer materials. The following mainly introduces the research status of photoelectric and electrocatalytic performance of WS2 film.

The WS2 film is prepared by chemical vapor deposition, which uses sulfur powder as the sulfur source, tungsten foil as the tungsten source and growth substrate, and Ar gas as the carrier gas. The graphene-like WS2 atoms layer film can be obtained by reaction at 700°C.

Research Status of Photoelectric Properties of WS2 Thin Film

The experimental results show that a 2H-phase single-layer WS2 film can be obtained by growing at 700°C for 1 min, and the light absorption and photoluminescence properties both show that the band gap of the single-layer WS2 film is about 2.08eV. The constructed single-layer WS2-silicon diode device shows excellent rectification characteristics, with a rectification factor of 1.39 and obvious light response characteristics, and the photoelectric conversion efficiency is about 7.12mA/W.

Research Status of Electrocatalytic Performance of WS2 Thin Film

The main research here is the electrocatalytic hydrogen evolution performance of the WS2 atomic layer film. The experimental results show that the multilayer WS2 atomic layer film obtained when vulcanized at 700°C for 60 minutes has the best hydrogen evolution performance. The current density can reach 10mA/cm2 when the overpotential is 0.36V, and the corresponding tafel slope is 82mV/ dec.

In addition, the WS2 film with rough surface can be prepared by oxidizing the tungsten foil and then vulcanizing. The electrocatalytic performance test results show that the current density of the sample reacted at 750oC for 30 minutes can reach 10mA/cm2 when the overpotential is 0.37V, and the corresponding tafel slope is 104mV/dec.

Finally, it is worth noting that tungsten sulfide nanobelts can be obtained by inserting nanobubbles between the layers of the multilayer tungsten sulfide atomic layer film. The characterization results found that the width of the obtained tungsten sulfide nanobelt was mainly about 10 nm, and the length was mostly about 100 nm-200 nm. In addition, the selected area electron energy spectrum analysis showed that the ratio of sulfur to tungsten atoms in the tungsten sulfide nanoribbons was about 1:1. The high-resolution transmission electron microscopy analysis showed that the tungsten sulfide nanoribbons had a cubic lattice structure and the interplanar spacing was about 0.4nm.

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