Two-dimensional Nano-tungsten Disulfide Fabricated By PECVD

Among the two-dimensional transition metal sulfides, single-layer nano-tungsten disulfide is a typical sandwich layered structure. Because of its relatively weak van der Waals force between layers, it can also be peeled into single or few layers of nanosheets. It is considered to be another important two-dimensional nanosheet material besides graphene, which has unique physical, chemical and electrical properties.

PECVD is a plasma enhanced chemical vapor deposition method, in which the plasma temperature is not high, but its internal is in the excited state. Its electronic energy is enough to break the molecular bond, and lead to the production of chemically active substances, so that the chemical reaction that could be carried out at high temperature can be carried out. When in the plasma field, due to the electrical activation of the reaction gas. The reaction temperature is greatly reduced, so that solid films can be formed on the substrates at lower temperatures or even at room temperatures. So, is it feasible to prepare two-dimensional nano-tungsten disulfide?

A double temperature field sliding track plasma PECVD system is used to remove air from quartz tube by injecting a certain amount of argon. After that, the SiO₂/Si substrate with certain size is placed directly above the vessel with certain quality of hexacarbonyl tungsten powder, the vessel with certain quality of sulfur powder is placed in the first temperature zone of the tube furnace, and the ceramic boat with hexacarbonyl tungsten is placed in the latter temperature zone of the tube furnace. Among them, the amount of sulfur powder is 500 mg, and the mass ratio of hexacarbonyl tungsten to sulfur powder is 1-3:100.

Two layers of tungsten disulfide can be obtained at the mass ratio of 1:100 and three layers of tungsten disulfide can be obtained at the mass ratio of 3:100. After 10 minutes and 10-20 SCCM argon gas is continuously injected, the internal pressure of the tube furnace is emphasized to 133.29 Pa, the plasma energy is set to 100-400 W, the first heating zone is heated to 160 ℃, the second heating zone is heated to 200 C, and the heating time is 20 minutes. After the two temperature zones have been heated up, 10 SCCM argon and 5 SCCM hydrogen are replaced. Two-dimensional tungsten sulfide thin films were prepared by reaction at room temperature for 10 minutes.

Two-dimensional nano-tungsten disulfide was prepared by plasma enhanced chemical vapor deposition (PECVD), which can greatly reduce the reaction temperature. The prepared two-dimensional tungsten disulfide thin films have good applications in the fields of secondary batteries, field effect transistors, sensors, organic electroluminescence, electrical storage and other optoelectronic devices.

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